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| TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero FEATURES * Package type: leaded * Package form: T-1 3/4 * Dimensions (in mm): 5 * Leads with stand-off * Peak wavelength: p = 870 nm * High reliability * High radiant power 94 8390 * High radiant intensity * Angle of half intensity: = 10 * Low forward voltage * Suitable for high pulse current operation DESCRIPTION TSFF5210 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. * High modulation bandwidth: fc = 24 MHz * Good spectral matching with Si photodetectors * Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with APPLICATIONS * Infrared video data transmission between camcorder and TV set * Free air data transmission systems with high modulation frequencies or high data transmission rate requirements * Smoke-automatic fire detectors PRODUCT SUMMARY COMPONENT TSFF5210 Ie (mW/sr) 180 (deg) 10 P (nm) 870 tr (ns) 15 Note Test conditions see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE TSFF5210 Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-13/4 ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation tp/T = 0.5, tp = 100 s tp = 100 s TEST CONDITION SYMBOL VR IF IFM IFSM PV VALUE 5 100 200 1 180 UNIT V mA mA A mW Document Number: 81090 Rev. 1.6, 04-Aug-08 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 131 TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero ABSOLUTE MAXIMUM RATINGS PARAMETER Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 C, unless otherwise specified t 5 s, 2 mm from case J-STD-051, leads 7 mm, soldered on PCB TEST CONDITION SYMBOL Tj Tamb Tstg Tsd RthJA VALUE 100 - 40 to + 85 - 40 to + 100 260 230 UNIT C C C C K/W 200 180 120 100 80 RthJA = 230 K/W 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21143 PV - Power Dissipation (mW) 140 120 100 80 60 40 20 0 RthJA = 230 K/W IF - Forward Current (mA) 160 0 10 20 30 40 50 60 70 80 90 100 21142 Tamb - Ambient Temperature (C) Tamb - Ambient Temperature (C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of e Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of p Rise time Fall time Cut-off frequency Virtual source diameter Note Tamb = 25 C, unless otherwise specified IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IDC = 70 mA, IAC = 30 mA pp TEST CONDITION IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s IF = 1 mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s IF = 100 mA, tp = 20 ms IF = 100 mA SYMBOL VF VF TKVF IR Cj Ie Ie e TKe p TKp tr tf fc d 120 125 180 1800 50 - 0.35 10 870 40 0.25 15 15 24 3.7 360 MIN. TYP. 1.5 2.3 - 1.8 10 MAX. 1.8 3.0 UNIT V V mV/K A pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns MHz mm www.vishay.com 132 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81090 Rev. 1.6, 04-Aug-08 TSFF5210 High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero BASIC CHARACTERISTICS Tamb = 25 C, unless otherwise specified Vishay Semiconductors 0.02 e, rel - Relative Radiant Power 100 1000 tP/T = 0.01 Tamb < 50 C 1.25 1.0 IF - Forward Current (mA) 0.05 0.1 0.75 0.5 0.2 0.5 0.25 0 780 100 0.01 16031 0.1 1.0 10 880 - Wavelength (nm) 980 tP - Pulse Duration (ms) 95 9886 Fig. 3 - Pulse Forward Current vs. Pulse Duration Fig. 6 - Relative Radiant Power vs. Wavelength 1000 Ie rel - Relative Radiant Intensity 0 10 20 30 - Angular Displacement IF - Forward Current (mA) 100 tP = 100 s tP/T = 0.001 10 40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 1 0 18873 1 3 2 VF - Forward Voltage (V) 4 15989 Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Relative Radiant Intensity vs. Angular Displacement 1000 Ie - Radiant Intensity (mW/sr) e, I e - Attenuation (dB) 1 0 100 -1 -2 -3 -4 -5 101 IFDC = 70 mA IFAC = 30 mA pp 10 1 0.1 1 16032 10 100 1000 102 103 104 105 IF - Forward Current (mA) 14256 f - Frequency (kHz) Fig. 5 - Radiant Intensity vs. Forward Current Fig. 8 - Attenuation vs. Frequency Document Number: 81090 Rev. 1.6, 04-Aug-08 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 133 TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero PACKAGE DIMENSIONS in millimeters 5.8 R 2.49 (sphere) 0.3 0.3 0.15 (4.9) 12.7 < 0.7 8.7 7.7 35.7 0.55 Area not plane 1.2 + 0.2 - 0.1 5 0.25 0.15 1.5 technical draw according to D specifications 0.5 0.5 + 0.15 - 0.05 + 0.15 - 0.05 2.54 nom. 6.544-5258.09-4 Issue: 2; 08.11.99 15909 www.vishay.com 134 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81090 Rev. 1.6, 04-Aug-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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